| 发明名称 |
Nano-electro-mechanical DRAM cell |
| 摘要 |
A DRAM cell and method for storing information in a dynamic random access memory using an electrostatic actuator beam to make an electrical connection between a storage capacitor and a bit line. |
| 申请公布号 |
US8432723(B2) |
申请公布日期 |
2013.04.30 |
| 申请号 |
US201113015936 |
申请日期 |
2011.01.28 |
| 申请人 |
CHANG JOSEPHINE B.;CHANG LELAND;GUILLORN MICHAEL A.;LI BRIAN J.;KOESTER STEVEN JOHN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B.;CHANG LELAND;GUILLORN MICHAEL A.;LI BRIAN J.;KOESTER STEVEN JOHN |
| 分类号 |
G11C11/24;G11C5/00;G11C5/06;G11C11/34 |
主分类号 |
G11C11/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
