| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process of depositing antimony oxide thin films by atomic layer deposition using an antimony reactant and an oxygen source. <P>SOLUTION: The antimony reactant may include antimony halides such as SbCl<SB POS="POST">3</SB>, antimony alkylamines, and antimony alkoxides such as Sb(OEt)<SB POS="POST">3</SB>. The oxygen source may be, for example, ozone. In some embodiments, the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers. <P>COPYRIGHT: (C)2013,JPO&INPIT |
