| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
<p>PURPOSE: A semiconductor device and a method for fabricating the same are provided to reduce parasitic capacitance by maintaining an electrical distance between a metal gate and a gate. CONSTITUTION: A semiconductor substrate includes a first area and a second area. A first gate(10) is positioned in the first area. An interlayer insulating layer(18,29) is formed to planarize the upper part of the first gate. A buffer layer pattern is positioned in the upper part of the interlayer insulating layer. A metal line(24) is formed between the buffer layer patterns.</p> |
| 申请公布号 |
KR20130054100(A) |
申请公布日期 |
2013.05.24 |
| 申请号 |
KR20120009196 |
申请日期 |
2012.01.30 |
| 申请人 |
SK HYNIX INC. |
发明人 |
KIM, JAE YOUNG;KIM, SEI JIN |
| 分类号 |
H01L21/3205;H01L21/28;H01L29/78 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
