SEMICONDUCTOR DEVICE COMPRISING TSV(THROUGH SILICON VIA)

摘要

PURPOSE: A semiconductor device including a TSV is provided to increase mechanical strength by performing a front etching process. CONSTITUTION: A line layer(130) is formed on the upper surface of a substrate(110). A penetration silicon via passes through the substrate. The via is electrically connected to the line layer. The lower end of the via is protruded from the lower surface of the substrate. The lateral surface of the lower end part is covered with silicon.