发明名称 |
Non-insulating stressed material layers in a contact level of semiconductor devices |
摘要 |
In sophisticated semiconductor devices, non-insulating materials with extremely high internal stress level may be used in the contact level in order to enhance performance of circuit elements, such as field effect transistors, wherein the non-insulating material may be appropriately "encapsulated" by dielectric material. Consequently, a desired high strain level may be obtained on the basis of a reduced layer thickness, while still providing the insulating characteristics required in the contact level.
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申请公布号 |
US8450172(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US20100823660 |
申请日期 |
2010.06.25 |
申请人 |
RICHTER RALF;RUELKE HARTMUT;HOHAGE JOERG;GLOBALFOUNDRIES INC. |
发明人 |
RICHTER RALF;RUELKE HARTMUT;HOHAGE JOERG |
分类号 |
H01L21/8238;H01L21/44;H01L21/4763 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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