发明名称 |
Method of fabricating a sealing structure for high-k metal gate |
摘要 |
The present disclosure provides a semiconductor device that includes a semiconductor substrate and a transistor formed in the substrate. The transistor includes a gate stack having a high-k dielectric and metal gate, a sealing layer formed on sidewalls of the gate stack, the sealing layer having an inner edge and an outer edge, the inner edge interfacing with the sidewall of the gate stack, a spacer formed on the outer edge of the sealing layer, and a source/drain region formed on each side of the gate stack, the source/drain region including a lightly doped source/drain (LDD) region that is aligned with the outer edge of the sealing layer.
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申请公布号 |
US8450161(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US201213465551 |
申请日期 |
2012.05.07 |
申请人 |
CHEN CHIEN-HAO;LIEN HAO-MING;LI SSU-YU;YEH JUN-LIN;LIN KANG-CHENG;HUANG KUO-TAI;LI CHII-HORNG;CHEN CHIEN-LIANG;FEI CHUNG-HAU;YANG WEN-CHIH;NG JIN-AUN;CHANG CHI HSIN;LIN CHUN MING;CHUANG HARRY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHIEN-HAO;LIEN HAO-MING;LI SSU-YU;YEH JUN-LIN;LIN KANG-CHENG;HUANG KUO-TAI;LI CHII-HORNG;CHEN CHIEN-LIANG;FEI CHUNG-HAU;YANG WEN-CHIH;NG JIN-AUN;CHANG CHI HSIN;LIN CHUN MING;CHUANG HARRY |
分类号 |
H01L21/00;H01L21/02 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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