| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of accurately searching a distribution of a threshold voltage of a memory cell. <P>SOLUTION: In the semiconductor storage device, a control section 11a reads out data for each threshold voltage from a plurality of memory cells by a read-out operation for investigating the distribution of the threshold voltages of the plurality of memory cells, obtains difference data between data which has been read out for each of the threshold voltages, obtains the minimum value of the distribution of the threshold voltages from the difference data, obtains a range of the threshold voltage which is a value smaller than the minimum value on the basis of the minimum value, and sets a voltage at the center of the obtained range of the threshold voltage at a read out voltage. <P>COPYRIGHT: (C)2013,JPO&INPIT |
