SEMICONDUCTOR STRUCTURE INCLUDING GATE ELECTRODE HAVING LATERALLY VARIABLE WORK FUNCTION

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor structure including a gate electrode having a laterally variable work function.

SOLUTION: A semiconductor structure, such as a CMOS structure, includes a gate electrode that has a laterally variable work function. The gate electrode that has the laterally variable work function may be formed using an angled ion implantation method or a sequential layering method. The gate electrode that has the laterally variable work function provides enhanced electrical performance for an undoped channel field effect transistor device.

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