| 发明名称 |
CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK |
| 摘要 |
<p>CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACKAbstract of the DisclosureA method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole,Fig. 9</p> |
| 申请公布号 |
SG190499(A1) |
申请公布日期 |
2013.06.28 |
| 申请号 |
SG20120052908 |
申请日期 |
2009.10.26 |
| 申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD.;SAMSUNG ELECTRONICS CO. LTD;INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
JEON BYUNG-GOO;PARK SUNG-CHUL;NIKKI EDLEMAN;ALOIS GUTMANN;FANG CHEN |
| 分类号 |
|
主分类号 |
|
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
