发明名称 |
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME |
摘要 |
A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. The gate electrode includes a refractory metal. A depletion region is disposed in the carrier channel and under the gate electrode.
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申请公布号 |
US2013168685(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201113338962 |
申请日期 |
2011.12.28 |
申请人 |
HSU CHUN-WEI;YU JIUN-LEI JERRY;YAO FU-WEI;YU CHEN-JU;YANG FU-CHIH;TSAI CHUN LIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU CHUN-WEI;YU JIUN-LEI JERRY;YAO FU-WEI;YU CHEN-JU;YANG FU-CHIH;TSAI CHUN LIN |
分类号 |
H01L29/778;H01L21/338;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
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