发明名称 INTEGRATED CIRCUIT HAVING A CHARGED-DEVICE MODEL ELECTROSTATIC DISCHARGE PROTECTION MECHANISM
摘要 An integrated circuit having charged-device model (CDM) electrostatic discharge (ESD) protection includes an I/O circuit, at least one CDM ESD protection device, and at least one internal circuit. The integrated circuit further includes at least one TSV (Through Silicon Via) each being coupled between a ground of at least one ground of the input/output circuit and one of the at least one ESD protection device, wherein each of the at least one ESD protection device is coupled between one of the at least one TSV and a ground of one of the at least one internal circuit.
申请公布号 US2013170082(A1) 申请公布日期 2013.07.04
申请号 US201213718984 申请日期 2012.12.18
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 YEH CHIH TING;LIANG YUNG CHIH
分类号 H02H9/04 主分类号 H02H9/04
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