发明名称 Through silicon via direct FET signal gating
摘要 A system comprises a first integrated circuit (IC) chip that includes a first electronic component; a second IC chip that includes a second electronic component; a through silicon via (TSV) in the second IC chip that electrically couples the first electronic component to the second electronic component; and a signal gating transistor that fully occludes the TSV.
申请公布号 US8492903(B2) 申请公布日期 2013.07.23
申请号 US201113171919 申请日期 2011.06.29
申请人 BARTLEY GERALD K.;GERMANN PHILIP R.;PAULSEN DAVID P.;SHEETS, II JOHN E.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BARTLEY GERALD K.;GERMANN PHILIP R.;PAULSEN DAVID P.;SHEETS, II JOHN E.
分类号 H01L29/78 主分类号 H01L29/78
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