Semiconductor Chip and Methods for Producing the Same
摘要
A fabrication method for thickening pad metal layers comprises: growing a first metal layer on a silicon substrate; etching the first metal layer to obtain a metal wire comprising a metal fuse and a pad; growing a passivation layer on the metal wire; etching the passivation layer to obtain a first window to expose a pad area; growing a second metal layer on the passivation layer having the first window; etching the second metal layer to obtain a metal layer covering the pad area only and expose the passivation layer outside the pad area; and etching the passivation layer outside the pad area to obtain a second window to expose a metal fuse area.
申请公布号
US2013187254(A1)
申请公布日期
2013.07.25
申请号
US201213730361
申请日期
2012.12.28
申请人
PEKING UNIVERSITY FOUNDER GROUP CO., LTD.;FOUNDER MICROELECTRONICS INTERNATIONAL CO., LTD.;FOUNDER MICROELECTRONICS INTERNATIONAL CO., LTD.;PEKING UNIVERSITY FOUNDER GROUP CO., LTD.