| 摘要 |
PROBLEM TO BE SOLVED: To disclose a method capable of manufacturing a semiconductor device having a configuration in which a lead frame is arranged for each of a front face and a rear face of a vertical semiconductor element without short-circuiting between a surface electrode and a rear face electrode of the semiconductor element.SOLUTION: A first lead frame 30 is arranged on a surface of a vertical IGBT 20, and a second lead frame 40 is arranged on a rear face of the IGBT 20. In this case, a first terminal part 34 and three second terminal parts 44, 45, and 46 are arranged at positions not overlapping with each other in a direction vertical to a surface of the IGBT 20. A first outer frame part 38 of the first lead frame 30 and a second outer frame part 48 of the second lead frame 40 are pressure-welded with each other. In a state that the first outer frame part 38 and the second outer frame part 48 are pressure-welded with each other, the IGBT 20, a first base 32 of the first lead frame 30, and a second base of the second lead frame 40 are sealed by resin. The first outer frame part 38 and the second outer frame part 48 are removed. |
