PROCEDE DE REALISATION D'UNE TRANCHEE D'ISOLATION DANS UN SUBSTRAT SEMI-CONDUCTEUR, ET STRUCTURE, EN PARTICULIER CAPTEUR D'IMAGE CMOS, OBTENUE PAR LEDIT PROCEDE

摘要

An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench including an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the active area and the encapsulation layer including nitrogen or carbon.