FINFET STRUCTURE WITH NOVEL EDGE FINS

摘要

PURPOSE: A finFET structure with novel edge fins is provided to increase surface areas by reducing the width variations of edge fins on an active area. CONSTITUTION: A semiconductor substrate includes a plurality of active areas. The active areas include separated fins. The separated fins are divided into regular fins (301A) and edge fins (303A). Metal lines (309) are connected to the regular fins. Gate structures (305) are formed across the separated fins.