| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a large size and operates at a high speed.SOLUTION: In a semiconductor device, a top gate transistor comprising a single-crystal semiconductor layer and a bottom gate transistor comprising an amorphous silicon (or microcrystalline silicon) semiconductor layer are formed on the same substrate. Then, gate electrodes of respective transistors are formed in the same layer, and source and drain electrodes are also formed in the same layer. In this way, manufacturing steps are reduced. In other words, two types of the transistors can be manufactured by adding only a few steps to a manufacturing process of the bottom gate transistor. |
