发明名称 |
HIGH VOLTAGE LDMOS DEVICE |
摘要 |
A high voltage lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOS) comprises a substrate; an epitaxy layer on the substrate; a drift region on the epitaxy layer; and a drain region and a source region at two ends. At least one pair of n-type and p-type semiconductor regions is arranged alternately above the interface of the substrate and the epitaxy layer and firmly attached to a lower surface of the drifting region; the n-type and p-type semiconductor regions are firmly closed to each other and arranged to form a lateral PN junction; and the p-type semiconductor region and the drifting region form a vertical PN junction. The n-type and p-type semiconductor regions are also totally called "a reduced surface field (RESURF) layer in body", and the LDMOS device with a RESURF layer in body effectively solves conflict between raising reverse withstand voltage and reducing forward on-resistance of the current LDMOS devices.
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申请公布号 |
US2013214355(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201113577360 |
申请日期 |
2011.04.28 |
申请人 |
FANG JIAN;CHEN LVYUN;LI WENCHANG;GUAN CHAO;WU QIONGLE;BO WENBIN;WANG ZEHUA;UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA |
发明人 |
FANG JIAN;CHEN LVYUN;LI WENCHANG;GUAN CHAO;WU QIONGLE;BO WENBIN;WANG ZEHUA |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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地址 |
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