发明名称 |
Power Transistor Having Segmented Gate |
摘要 |
There are disclosed herein various implementations of a transistor having a segmented gate region. Such a transistor may include at least one segmentation dielectric segment and two or more gate dielectric segments. The segmentation dielectric segment or segments are thicker than the gate dielectric segments, and is/are situated between the gate dielectric segments. The segmentation dielectric segment or segments cause an increase in the effective gate length so as to improve resistance to punch-through breakdown between a drain electrode and a source electrode of the transistor when the transistor is off.
|
申请公布号 |
US2013214283(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201313750986 |
申请日期 |
2013.01.25 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION;INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BRIERE MICHAEL A.;THAPAR NARESH |
分类号 |
H01L29/778;H01L29/20;H01L29/66;H01L29/78 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|