| 摘要 |
A solid-state imaging device includes: plural pixel electrodes two-dimensionally arranged above a substrate; a counter electrode constituted of a transparent electrically conductive oxide having a resistance of not more than 100 kOmega/□, which is formed at an upper layer of the plural pixel electrodes; a light receiving layer including a photoelectric conversion layer containing an organic material, which is formed between the plural pixel electrodes and the counter electrode; and a connecting section for undergoing electrical connection between a voltage supply line for supplying a bias voltage to be impressed to the counter electrode, and in a plan view, a rectangular region in which the plural pixel electrodes are arranged is defined as a pixel region; the pixel region has a size of not more than 5 inches; the connecting section is formed as defined herein; and the counter electrode is formed as defined herein.
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