发明名称 |
HAFNIUM TANTALUM TITANIUM OXIDE FILMS |
摘要 |
Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in a transistor. An embodiment may include forming a hafnium tantalum titanium oxide film using a monolayer or partial monolayer sequencing process such as reaction sequence atomic layer deposition.
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申请公布号 |
US2013224916(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201313849970 |
申请日期 |
2013.03.25 |
申请人 |
MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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