发明名称 NONVOLATILE MEMORY DEVICE HAVING ADJUSTABLE PROGRAM PULSE WIDTH
摘要 A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.
申请公布号 US2013223143(A1) 申请公布日期 2013.08.29
申请号 US201213721859 申请日期 2012.12.20
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO YONGSUNG;CHOI KIHWAN;PARK IL HAN;SONG KIIWHAN;YOON SANGYONG
分类号 G11C7/04 主分类号 G11C7/04
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