发明名称 |
NONVOLATILE MEMORY DEVICE HAVING ADJUSTABLE PROGRAM PULSE WIDTH |
摘要 |
A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line. |
申请公布号 |
US2013223143(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201213721859 |
申请日期 |
2012.12.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO YONGSUNG;CHOI KIHWAN;PARK IL HAN;SONG KIIWHAN;YOON SANGYONG |
分类号 |
G11C7/04 |
主分类号 |
G11C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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