SEMICONDUCTOR DEVICE

摘要

The problem addressed by the present invention is to provide a static memory cell using a surrounding gate transistor (SGT) which is highly integrated and ensures stable operation. A six transistor SRAM cell comprises: a first driver transistor constituted by an SGT having a first gate electrode made of at least a metal that is formed on the periphery of a first gate insulating film; a first selection transistor constituted by an SGT having a second gate electrode made of at least a metal that is formed on the periphery of a second gate insulating film; a first load transistor constituted by an SGT having a third gate electrode made of at least a metal that is formed on the periphery of a third gate insulating film; and a first gate wire connected to said second gate electrode. The perimeter of an island-shaped semiconductor layer of said driver transistor is less than two times of the perimeter of the island-shaped semiconductor layer of the selection transistor and the voltage applied to the second gate electrode is lower than the voltage applied to a first conductive type high-concentration semiconductor layer at the upper portion of the island-shaped semiconductor layer of the selection transistor, thereby solving the above problem.