CRYSTAL GROWTH APPARATUS AND CRYSTAL GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide a crystal growth apparatus and a crystal growth method for continuously growing a single crystal of silicon carbide by a liquid phase growing method.SOLUTION: In a step for continuously growing a single crystal of silicon carbide (SiC) by a liquid phase growing method, a cylindrical body 14 is arranged between a seed rod 13 holding a seed crystal 21 and the wall body 12b of a crucible 12 surrounding the surround of the seed rod 13 and spaced apart from the seed rod 13. Further, the lower end of the cylindrical body 14 is arranged so as to be located below a solution surface 20a. The cylindrical body 14 is rotated around the same rotation axis in the same direction and at the same rotational speed as those of the seed rod 13. Furthermore, the cylindrical body 14 is heated by a heater 16 at least during the step for growing the crystal.