SEMICONDUCTOR MEMORY DEVICE AND PROCESS OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of improving performance of a semiconductor memory device provided with a recording film having a superlattice structure.SOLUTION: The semiconductor memory device records information by changing electric resistance of a recording film 3 caused by a change in an atomic arrangement of the recording film 3. The recording film 3 comprises: a lamination part 10 formed by laminating a first crystalline layer 13 and a second crystalline layer 14 composed respectively of a chalcogen compound of different composition; an orientation layer 12 that heighten the orientation of the lamination part 10; and an anchoring layer 11 that improves flatness of the orientation layer 12.