| 摘要 |
PROBLEM TO BE SOLVED: To improve a static noise margin while coping with the miniaturization of memory cells and the reduction in power supply voltage.SOLUTION: When a threshold is lower in a drive transistor D2 than a drive transistor D1, a first cell potential control unit 8 controls a first cell potential of the drive transistor D2 so that a hot carrier is injected into the drive transistor D2, and when the hot carrier is injected into the drive transistor D2, '1' is stored in a storage node Nt and '0' is stored in a storage node Nc. |
