发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR CRYSTAL GROWTH SUBSTRATE |
摘要 |
A method of manufacturing a semiconductor device includes grinding a back side of a substrate; and forming a nitride semiconductor layer on a front side of the substrate after the grinding. Compressive stress is generated in the nitride semiconductor layer that is formed.
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申请公布号 |
US2013248932(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213725964 |
申请日期 |
2012.12.21 |
申请人 |
FUJITSU LIMITED |
发明人 |
TOMABECHI SHUICHI |
分类号 |
H01L29/66;H01L21/02;H01L29/778 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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