| 摘要 |
The invention relates to a method for producing a semiconductor wafer doped differently on both sides. According to the invention, a first dielectric layer containing a first dopant is formed on a first side of the semiconductor wafer and a second dielectric layer containing a second dopant, which is different from the first dopant, is formed on a second side of the semiconductor wafer, said second side being different from the first side, by means of an APCVD process in each case, after which, by means of a joint thermal treatment process, the first dopant is indiffused into the first side of the semiconductor wafer and the second dopant is indiffused into the second side of the semiconductor wafer. Use for example for producing silicon solar cells having a dielectrically passivated back side. |
