| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable compound semiconductor device which achieves reliable normally-off without causing damage to a compound semiconductor laminate structure.SOLUTION: AlGaN/GaN HEMT comprises on an SiC substrate 1, a compound semiconductor laminate structure 2 and a gate electrode 9 formed above the compound semiconductor laminate structure. In a lower region position matched with the gate electrode 9 of the compound semiconductor laminate structure 2, a p-type impurity (Mg) and oxygen (O) are localized to a depth where a part of a two dimensional electron gas generated in the compound semiconductor laminate structure 2 dissolves. |
