| 摘要 |
PROBLEM TO BE SOLVED: To improve efficiency of repairing failed memory cells included in a memory cell array.SOLUTION: A semiconductor device includes: a memory cell array 101; an optical fuse circuit 141 and electric fuse circuit 142 that store addresses of failed memory cells; and a replacement address analysis circuit 146 that writes row addresses or column addresses of the failed memory cells to the electric fuse circuit 142. When a first operation mode is selected, the replacement address analysis circuit 146 is enabled to write both the row address and column address to the electric fuse circuit 142. When a second operation mode is selected, the circuit is enabled to write one of the row address and column address to the electric fuse circuit 142 and disabled to write the other address. Thus, even when either all redundant word lines or all redundant bit lines are used up, a correct repair can be made. |
