发明名称 METHOD FOR MAKING EPITAXIAL STRUCTURE
摘要 A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.
申请公布号 US2013255566(A1) 申请公布日期 2013.10.03
申请号 US201213593607 申请日期 2012.08.24
申请人 WEI YANG;FAN SHOU-SHAN;HON HAI PRECISION INDUSTRY CO., LTD.;TSINGHUA UNIVERSITY 发明人 WEI YANG;FAN SHOU-SHAN
分类号 C30B19/00;C30B23/04;C30B25/04 主分类号 C30B19/00
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