发明名称 Method of determining pressure to apply to wafers during a CMP
摘要 A method for uniformly planarizing a wafer that includes determining a first wafer warped value at a first zone on the wafer, determining a second wafer warped value at a second zone on the wafer, and calculating a pressure difference based on the first and second wafer warped values at the first and second zones is provided. The method also includes performing a chemical mechanical polishing of the wafer, applying a first pressure based on the first wafer warped value to the wafer at the first zone during the chemical mechanical polishing, and applying a second pressure based on the second wafer warped value to the wafer at the second zone during the chemical mechanical polishing, a difference between the first pressure and the second pressure based on the pressure difference.
申请公布号 US8560111(B2) 申请公布日期 2013.10.15
申请号 US20090649037 申请日期 2009.12.29
申请人 ZHANG JOHN H.;KLEEMEIER WALTER;SAMPSON RONALD K.;STMICROELECTRONICS, INC. 发明人 ZHANG JOHN H.;KLEEMEIER WALTER;SAMPSON RONALD K.
分类号 G06F19/00 主分类号 G06F19/00
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