发明名称 |
SEMICONDUCTOR DEVICE, IMAGE DISPLAY DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE |
摘要 |
A semiconductor device which has reduced power consumption and includes a selection transistor is provided. A semiconductor device in which the number of wirings and terminals for inputting a power supply potential is reduced and which operates at high speed is provided. A buffer circuit connected to a gate line connected to a gate of the selection transistor has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential depending on the selection signal. A bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side among a plurality of inverters included in a buffer circuit. Further, by providing a delay circuit in the buffer circuit, the bootstrap circuit starts to boost a potential at the timing later than the input of the selection signal.
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申请公布号 |
US2013278324(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201313862932 |
申请日期 |
2013.04.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KANEYASU MAKOTO;TOYOTAKA KOUHEI |
分类号 |
H03K3/012 |
主分类号 |
H03K3/012 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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