发明名称 SEMICONDUCTOR DEVICE, IMAGE DISPLAY DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE
摘要 A semiconductor device which has reduced power consumption and includes a selection transistor is provided. A semiconductor device in which the number of wirings and terminals for inputting a power supply potential is reduced and which operates at high speed is provided. A buffer circuit connected to a gate line connected to a gate of the selection transistor has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential depending on the selection signal. A bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side among a plurality of inverters included in a buffer circuit. Further, by providing a delay circuit in the buffer circuit, the bootstrap circuit starts to boost a potential at the timing later than the input of the selection signal.
申请公布号 US2013278324(A1) 申请公布日期 2013.10.24
申请号 US201313862932 申请日期 2013.04.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KANEYASU MAKOTO;TOYOTAKA KOUHEI
分类号 H03K3/012 主分类号 H03K3/012
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