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发明名称
半导体记忆装置及用于该半导体记忆装置的平行测试方法
摘要
本发明揭示一种半导体记忆装置及用于该半导体记忆装置的平行测试方法。该测试包括同时地写入资料于多个记忆储存库中,从该等记忆储存库之一部分读取该等资料,压缩该等读取资料,及输出该等压缩资料至一晶片外面。
申请公布号
TWI413987
申请公布日期
2013.11.01
申请号
TW097122327
申请日期
2008.06.13
申请人
海力士半导体股份有限公司 南韩
发明人
金保延
分类号
G11C29/40
主分类号
G11C29/40
代理机构
代理人
陈长文 台北市松山区敦化北路201号7楼
主权项
地址
南韩
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