发明名称 Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof
摘要 A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
申请公布号 US8574939(B2) 申请公布日期 2013.11.05
申请号 US20100836075 申请日期 2010.07.14
申请人 HUANG SHIH CHENG;TU PO MIN;WU PENG YI;LIN WEN YU;MA CHIH PANG;HONG TZU CHIEN;SHEN CHIA HUI;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. 发明人 HUANG SHIH CHENG;TU PO MIN;WU PENG YI;LIN WEN YU;MA CHIH PANG;HONG TZU CHIEN;SHEN CHIA HUI
分类号 H01L33/22 主分类号 H01L33/22
代理机构 代理人
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