发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 A semiconductor light emitting device includes a multilayer structure formed on a substrate and including a plurality of semiconductor layers including a light-emitting layer. The multilayer structure includes an optical waveguide having ridge structure provided at an upper part of the multilayer structure. The optical waveguide extends from a front facet to a rear facet of the multilayer structure, and includes a straight waveguide section which is inclined to a normal to the front facet of the multilayer structure and extends from the front facet, and a curved waveguide section which perpendicularly reaches the rear facet of the multilayer structure. The curved waveguide section is closer to the rear facet of the multilayer structure than a center of the optical waveguide is.
申请公布号 US2013292723(A1) 申请公布日期 2013.11.07
申请号 US201313756579 申请日期 2013.02.01
申请人 PANASONIC CORPORATION 发明人 OHNO HIROSHI
分类号 H01L33/58 主分类号 H01L33/58
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