| 摘要 |
A method for manufacturing a semiconductor component, comprising the steps of: forming on a substrate a dummy gate stack structure, where the dummy gate stack structure comprises a carbon-based material; forming source/drain areas in the substrate on two sides of the dummy gate stack structure; etching away the dummy gate stack structure until the substrate is exposed, leaving behind a gate groove; forming in the gate groove a gate stack structure. According to the method for manufacturing the semiconductor component, the carbon-based material is employed as a replacement for a dummy gate of a silicon-based material, the need in a post-gate process for the addition of a padding oxidized layer and/or an etching barrier layer is obviated when etching away the dummy gate, thus simplifying the process in addition to ensuring the reliability of the component, and reducing costs. |
