METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND APPARATUS FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor substrate and an apparatus for manufacturing a nitride semiconductor substrate, which are capable of improving in-plane uniformity of a substrate temperature in a step of epitaxially growing a carrier supply layer on a support substrate.SOLUTION: The method for manufacturing a nitride semiconductor substrate includes the steps of: preparing a tray having a mounting surface which is overall parallel to a second substrate main surface of a nitride semiconductor substrate in which layer formation has been performed up to a carrier supply layer deposited while heating a support substrate; arranging a new support substrate on the tray so that its second substrate main surface faces the mounting surface; and epitaxially growing a nitride semiconductor layer on a first substrate main surface of the new support substrate mounted on the tray.