An embodiment is a semiconductor structure. The semiconductor structure comprises a p-type region in a substrate; a first n-type well in the p-type region; a first p-type well in the p-type region; and a second p-type well in the first p-type well. A concentration of a p-type impurity in the first p-type well is less than a concentration of a p-type impurity in the second p-type well. Additional embodiments further comprise further n-type and p-type wells in the substrate. A method for forming a semiconductor structure is also disclosed.
申请公布号
US8604582(B2)
申请公布日期
2013.12.10
申请号
US201113271725
申请日期
2011.10.12
申请人
LEE JAM-WEM;CHANG YI-FENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.