发明名称 Methods of forming dielectric material-containing structures
摘要 Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.
申请公布号 US8603877(B2) 申请公布日期 2013.12.10
申请号 US201213461067 申请日期 2012.05.01
申请人 ROCKLEIN NOEL;CARLSON CHRIS;PETERSON DAVE;YANG CUNYU;VAIDYANATHAN PRAVEEN;BHAT VISHWANATH;MICRON TECHNOLOGY, INC. 发明人 ROCKLEIN NOEL;CARLSON CHRIS;PETERSON DAVE;YANG CUNYU;VAIDYANATHAN PRAVEEN;BHAT VISHWANATH
分类号 H01L21/316 主分类号 H01L21/316
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