发明名称 FLUORINE-MODIFICATION PROCESS AND APPLICATIONS THEREOF
摘要 The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.
申请公布号 US2013328018(A1) 申请公布日期 2013.12.12
申请号 US201213494888 申请日期 2012.06.12
申请人 CHEN KUEI-HSIEN;HAN HSIEH-CHENG;CHANG CHING-CHUN;CHEN LI-CHYONG;DU CHAN-YI;ACADEMIA SINICA 发明人 CHEN KUEI-HSIEN;HAN HSIEH-CHENG;CHANG CHING-CHUN;CHEN LI-CHYONG;DU CHAN-YI
分类号 H01L51/48;H01L51/40;H01L51/46;H01L51/56 主分类号 H01L51/48
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