发明名称 |
FLUORINE-MODIFICATION PROCESS AND APPLICATIONS THEREOF |
摘要 |
The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same. |
申请公布号 |
US2013328018(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201213494888 |
申请日期 |
2012.06.12 |
申请人 |
CHEN KUEI-HSIEN;HAN HSIEH-CHENG;CHANG CHING-CHUN;CHEN LI-CHYONG;DU CHAN-YI;ACADEMIA SINICA |
发明人 |
CHEN KUEI-HSIEN;HAN HSIEH-CHENG;CHANG CHING-CHUN;CHEN LI-CHYONG;DU CHAN-YI |
分类号 |
H01L51/48;H01L51/40;H01L51/46;H01L51/56 |
主分类号 |
H01L51/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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