发明名称 INDUCTION COUPLING PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an induction coupling plasma processing apparatus which can ensure a uniform plasma distribution even for a large substrate.SOLUTION: A high frequency antenna 13 having an outer antenna 13a, an inner antenna 13b and an intermediate antenna 13c is provided concentrically above a processing chamber 4 where a rectangular substrate is subjected to plasma processing. The outer antenna 13a and the intermediate antenna 13c are connected with variable capacitors 21a, 21c for controlling plasma density distribution. Each antenna constitutes a spiral multiplexed antenna so that the antenna itself becomes substantially rectangular. The winding is set so that a uniform electric field is formed in the arrangement region. The number of turns of each antenna is set to decrease from the inner antenna toward the outer antenna, so that the electric field can be made uniform between the arrangement regions of the antennas.
申请公布号 JP2013258409(A) 申请公布日期 2013.12.26
申请号 JP20130146049 申请日期 2013.07.12
申请人 TOKYO ELECTRON LTD 发明人
分类号 H01L21/3065;C23C16/505;H05H1/46 主分类号 H01L21/3065
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