| 摘要 |
A semiconductor device (100) of the present invention is provided with: a semiconductor base body (110) having an n+ type semiconductor layer (112) and an n- type semiconductor layer (114); a p+ type diffusion region (120) selectively formed on the surface of the n- type semiconductor layer (114); and a barrier metal layer (130), which is formed on the surface of the n- type semiconductor layer (114) and on the surface of the p+ type diffusion region (120), forms a Schottky junction with the n- type semiconductor layer (114), and forms an ohmic junction with the p+ type diffusion region (120). In the semiconductor base body (110), platinum, as a heavy metal, is diffused such that the concentration thereof is highest on the surface of the n- type semiconductor layer (114). With the semiconductor device (100) of the present invention, a forward voltage drop (VF) can be reduced and a reverse recovery time (trr) can be shortened, while maintaining a high reverse direction withstand voltage (VR) and a low leak current (IR). Furthermore, with the semiconductor device (100) of the present invention, excellent soft recovery characteristics can be obtained. |
