发明名称 METHOD FOR MANUFACTURING METAL SUBSTRATE FOR GROWING CARBON NANOTUBE, OR THE LIKE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a metal substrate capable of depositing a film by controlling the film thickness highly accurately, when depositing a catalyst film used for CNT growth on the metal substrate by sputtering film-deposition.SOLUTION: In a method for manufacturing a metal substrate used for deposition of a catalyst film for CNT growth by sputtering film-deposition, the metal substrate is thermally treated under a predetermined reduced pressure to discharge hydrogen gas before film deposition.
申请公布号 JP2014015358(A) 申请公布日期 2014.01.30
申请号 JP20120154397 申请日期 2012.07.10
申请人 NITTA IND CORP 发明人 NODA KYOHEI;KOMUKAI TAKUJI;SHIMOMOTO ATSUSHI
分类号 C01B31/02;C23C14/02;C23C14/06 主分类号 C01B31/02
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