发明名称 |
METHOD FOR MANUFACTURING METAL SUBSTRATE FOR GROWING CARBON NANOTUBE, OR THE LIKE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a metal substrate capable of depositing a film by controlling the film thickness highly accurately, when depositing a catalyst film used for CNT growth on the metal substrate by sputtering film-deposition.SOLUTION: In a method for manufacturing a metal substrate used for deposition of a catalyst film for CNT growth by sputtering film-deposition, the metal substrate is thermally treated under a predetermined reduced pressure to discharge hydrogen gas before film deposition. |
申请公布号 |
JP2014015358(A) |
申请公布日期 |
2014.01.30 |
申请号 |
JP20120154397 |
申请日期 |
2012.07.10 |
申请人 |
NITTA IND CORP |
发明人 |
NODA KYOHEI;KOMUKAI TAKUJI;SHIMOMOTO ATSUSHI |
分类号 |
C01B31/02;C23C14/02;C23C14/06 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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