INTERFACE EVALUATION METHOD OF SEMICONDUCTOR SUBSTRATE AND INSULATION FILM, AND INTERFACE EVALUATION DEVICE OF SEMICONDUCTOR SUBSTRATE AND INSULATION FILM

摘要

PROBLEM TO BE SOLVED: To provide an evaluation method and an evaluation device of an interface capable of evaluating the interface of a semiconductor substrate and an insulation film formed on the surface thereof accurately, even if a silicon carbide substrate is used as the semiconductor substrate.SOLUTION: A measurement area on the surface of a silicon carbide substrate Xsubjected to passivation is irradiated with excitation light and a measurement wave, and a first carrier life τin the silicon carbide substrate Xis determined based on the reflection measurement wave or transmission measurement wave thereof. An insulation film Xis formed on the surface of the silicon carbide substrate X, a measurement area in the insulation film Xis irradiated with excitation light and a measurement wave, and a second carrier life τin the silicon carbide substrate Xis determined based on the reflection measurement wave or transmission measurement wave thereof. The interface of the silicon carbide substrate Xand the insulation film Xis evaluated from the first carrier life τand second carrier life τ.