| 摘要 |
Provided is a non-volatile semiconductor storage device including a memory cell which is disposed on a semiconductor substrate and where a control gate electrode is disposed on a charge storage layer, a select gate transistor where a select gate electrode is disposed between a source region and a drain region and which shares the source region with the memory cell, a first air gap which is disposed between the charge storage layers and between the source regions adjacent to each other in a word line direction and which is formed continuously over the memory cell and the select gate transistor adjacent to each other in a bit line direction so as to be concealed under the word line and under the select gate electrode, and a back-filling insulating film which back-fills an air gap between the drain electrodes adjacent to each other in the word line direction. |
