发明名称 |
NANOTUBE SEMICONDUCTOR DEVICES |
摘要 |
Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a first semiconductor layer having trenches and mesas formed thereon where the trenches extend from the top surface to the bottom surface of the first semiconductor layer. The semiconductor device includes semiconductor regions formed on the bottom surface of the mesas of the first semiconductor layer. |
申请公布号 |
US2014042490(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201314058874 |
申请日期 |
2013.10.21 |
申请人 |
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED |
发明人 |
YILMAZ HAMZA;WANG XIAOBIN;BHALLA ANUP;CHEN JOHN;CHANG HONG |
分类号 |
H01L29/739;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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