| 摘要 |
The present invention relates to semiconductor technology. In particular, the present invention relates to high-speed, high voltage switching for a high voltage generator for an X-ray system. Switching elements, e.g. IGBTs or MOS-FETs, are employed for high-speed high voltage switching. However, circuit elements or parasitic elements at an input of the switching element limit the switching speed of the switching element. The present invention proposes applying a higher than allowed voltage to the input of the switching element, e.g. a voltage higher than the maximum allowed gate voltage of an IGBT or MOS-FET, to increase switching speed. A feedback loop is provided for save operation. thus, a switching circuit (20) for high speed switching is provided, comprising an amplifier circuit (22), comprising an output (8a) being adapted to be connectable to an input (8b) of a switching arrangement (2), wherein the voltage provided by the output (8a) exceeds a maximum gate voltage, wherein the amplifier circuit (22) is controllable so that a current internal gate voltage does not to exceed the maximum internal gate voltage. |
