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发明名称
半导体装置及其制造方法
摘要
提供一种即使使用ZnO半导体装置以及使用添加有n型或p型杂质的ZnO薄膜作为源极电极与汲极电极仍不会产生缺陷或故障之半导体装置以及其制造方法。该半导体装置包含于闸极电极上藉由使用氧化矽薄膜或氮氧化矽薄膜而形成之闸极绝缘薄膜、于闸极绝缘薄膜上之Al薄膜或Al合金薄膜、于Al薄膜或Al合金薄膜上之添加有n型或p型杂质的ZnO薄膜以及于添加有n型或p型杂质的ZnO薄膜以及闸极绝缘薄膜上之ZnO半导体薄膜。
申请公布号
TWI427793
申请公布日期
2014.02.21
申请号
TW095142083
申请日期
2006.11.14
申请人
半导体能源研究所股份有限公司 日本
发明人
秋元健吾
分类号
H01L29/786;H01L21/336;G02F1/1368;H01L27/32
主分类号
H01L29/786
代理机构
代理人
林志刚 台北市中山区南京东路2段125号7楼
主权项
地址
日本
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