发明名称 MEMORY DEVICE FOR REDUCING WRITE FAIL, MEMORY SYSTEM INCLUDING THE SAME, AND WRITE METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a memory device for reducing a write fail, a memory system including the same, and a write method thereof.SOLUTION: A memory system of the present invention includes: a memory device including a plurality of memory cells; and a memory controller that controls the memory device. After data is written in a specified memory cell of the memory device and a word line including the specified memory cell is precharged, the data that is written immediately before the precharge is rewritten in the same memory cell, thereby allowing the probability of a write fail to be reduced.
申请公布号 JP2014049135(A) 申请公布日期 2014.03.17
申请号 JP20130178156 申请日期 2013.08.29
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SON JONG-PIL;PARK CHEOL-WOO;YU HAK-SOO;KO OZEN
分类号 G06F12/16;G11C11/407 主分类号 G06F12/16
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