发明名称 |
MEMORY DEVICE FOR REDUCING WRITE FAIL, MEMORY SYSTEM INCLUDING THE SAME, AND WRITE METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a memory device for reducing a write fail, a memory system including the same, and a write method thereof.SOLUTION: A memory system of the present invention includes: a memory device including a plurality of memory cells; and a memory controller that controls the memory device. After data is written in a specified memory cell of the memory device and a word line including the specified memory cell is precharged, the data that is written immediately before the precharge is rewritten in the same memory cell, thereby allowing the probability of a write fail to be reduced. |
申请公布号 |
JP2014049135(A) |
申请公布日期 |
2014.03.17 |
申请号 |
JP20130178156 |
申请日期 |
2013.08.29 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SON JONG-PIL;PARK CHEOL-WOO;YU HAK-SOO;KO OZEN |
分类号 |
G06F12/16;G11C11/407 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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